Benchmarking high fidelity single-shot readout of semiconductor qubits

Abstract

Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.

arXiv comment19 pages, 8 figures

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• Probing quantum devices with radio-frequency reflectometry
• Repetitive single electron spin readout in silicon
• High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit
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• Real-Time Feedback Control of Charge Sensing for Quantum Dot Qubits
• Spin-Valley Protected Kramers Pair in Bilayer Graphene
• Robust energy selective tunneling readout of singlet triplet qubits under large magnetic field gradient
• Single-shot readout of multiple donor electron spins with a gate-based sensor
• Probabilistic teleportation of a quantum dot spin qubit
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• Generalized figure of merit for qubit readout
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• Electrical readout of spins in the absence of spin blockade
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• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots