Chip-integrated voltage sources for control of trapped ions

Abstract

Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We demonstrate the cryogenic operation of an ion-trap that incorporates monolithically-integrated high-voltage CMOS electronics ($\pm 8\mathrm{V}$ full swing) to generate surface-electrode control potentials without the need for external, analog voltage sources. A serial bus programs an array of 16 digital-to-analog converters (DACs) within a single chip that apply voltages to segmented electrodes on the chip to control ion motion. Additionally, we present the incorporation of an integrated circuit that uses an analog switch to reduce voltage noise on trap electrodes due to the integrated amplifiers by over $50\mathrm{dB}$. We verify the function of our integrated electronics by performing diagnostics with trapped ions and find noise and speed performance similar to those we observe using external control elements.

arXiv comment7 pages, 3 figures

References in corpus (25)

• Quantum computing with trapped ions
• Heating of trapped ions from the quantum ground state
• A microfabricated surface-electrode ion trap for scalable quantum information processing
• Ion-trap measurements of electric-field noise near surfaces
• Blueprint for a microwave trapped-ion quantum computer
• Ion Trap in a Semiconductor Chip
• Scalable ion traps for quantum information processing
• Cryogenic Trapped-Ion System for Large Scale Quantum Simulation
• Trapped-ion probing of light-induced charging effects on dielectrics
• Temperature Dependence of Electric Field Noise Above Gold Surfaces
• Deterministic entanglement of ions in thermal states of motion
• Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation
• Microfabricated Ion Traps
• Fast quantum control and light-matter interactions at the 10,000 quanta level
• Ion traps fabricated in a CMOS foundry
• Fast ion swapping for quantum information processing
• Measurement of Ion Motional Heating Rates over a Range of Trap Frequencies and Temperatures
• Loading of a surface-electrode ion trap from a remote, precooled source
• Scalable Loading of a Two-Dimensional Trapped-Ion Array
• Laser-induced charging of microfabricated ion traps
• Quantum control of the motional states of trapped ions through fast switching of trapping potentials
• Transparent ion trap with integrated photodetector
• Single-ion, transportable optical atomic clocks
• In-Vacuum Active Electronics for Microfabricated Ion Traps
• Method for Determination of Technical Noise Contributions to Ion Motional Heating

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• How to wire a 1000-qubit trapped ion quantum computer
• High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
• High-fidelity trapped-ion qubit operations with scalable photonic modulators
• Penning micro-trap for quantum computing
• Industrially Microfabricated Ion Trap with 1 eV Trap Depth
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