Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films

Abstract

Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two methods to investigate the insulator-to-metal transition at the surface of nanocrystalline diamond films. The finite boron doping strongly increases the maximum hole density which can be induced electrostatically with respect to intrinsic diamond. The ionic gate pushes the conductivity of the film surface away from the variable-range hopping regime and into the quantum critical regime. However, the combination of the strong intrinsic surface disorder due to a non-negligible surface roughness, and the introduction of extra scattering centers by the ionic gate, prevents the surface accumulation layer to reach the metallic regime.

arXiv comment5 pages, 4 figures

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Cited by in corpus (8)

• Ionic gating in metallic superconductors: A brief review
• Two-dimensional hole transport in ion-gated diamond surfaces: A brief review
• Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
• Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels
• Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation
• Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer
• Facile synthesis of palladium hydride via ionic gate-driven protonation using a deep eutectic solvent