Donors and Deep Acceptors in $\beta$-Ga2O3

Abstract

We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $\beta$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in $\beta$-Ga2O3. Additionally, we show that our measured Hall effect data are consistent with Si and Ge acting as typical shallow donors, rather than shallow DX centers. High temperature Hall effect measurement of Fe doped $\beta$-Ga2O3 indicates that the material remains weakly n-type even with the Fe doping, with an acceptor energy of 860 meV relative to the conduction band for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate an activation energy of 1.1 eV, as determined from the temperature dependent conductivity.

19 pages, 6 figures

References in corpus (7)

• Intrinsic Electron Mobility Limits in beta-Ga2O3
• High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
• Anisotropy, phonon modes, and free charge carrier parameters in monoclinic $\beta$-gallium oxide single crystals
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• Delta-doped Beta- Gallium Oxide Field Effect Transistor
• Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
• Dielectric tensor of monoclinic Ga${}_2$O${}_3$ single crystals in the spectral range $0.5-8.5$eV

Cited by in corpus (14)

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• Ion implantation in \b{eta}-Ga2O3: physics and technology
• Low Temperature Homoepitaxy Of (010) $\beta$-Ga${}_2$O${}_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window
• 4.4 kV $\beta$-Ga${}_2$O${}_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm${}^2$
• Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping
• Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al${}_x$Ga${}_{1-x}$)${}_2$O${}_3$
• On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
• Record-High Electron Mobility and Controlled Low 10${}^{15}$ cm${}^{-3}$ Si-doping in (010) $\beta$-Ga${}_2$O${}_3$ Epitaxial Drift Layers
• Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $\beta$-Ga${}_2$O${}_3$ and $\beta$-(Al${}_x$Ga${}_1-x$)${}_2$ O${}_3$ Films
• Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals
• Measurement of Ultrafast Dynamics of Photoexcited Carriers in $\beta$-Ga${}_2$O${}_3$ by Two-Color Optical Pump-Probe Spectroscopy
• Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
• LPCVD Grown Si-Doped $\beta$-Ga${}_2$O${}_3$ Films with Promising Electron Mobilities
• Red Luminescence in H-doped beta-Ga2O3