23 citations · 26 across the 6 of their papers we have counts for
12 papers
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…
Young's Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators
Xu-Qian Zheng, Hongping Zhao, Zhitai Jia +2
We report on the non-destructive measurement of Young's modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring…
Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic InO
Megan Stokey, Rafal Korlacki, Sean Knight +8
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic…
Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…
Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Yixiong Zheng, Zixuan Feng, A F M Anhar Uddin Bhuiyan +5
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b…
Experimental determination of the valence band offsets of and with
Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6
A predicted type-II staggered band alignment with an approximately valence band offset at the heterointerface has inspired novel band-engineered $III-N/ZnGeN…