288 citations · 432 across the 12 of their papers we have counts for
12 papers
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…
Young's Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators
Xu-Qian Zheng, Hongping Zhao, Zhitai Jia +2
We report on the non-destructive measurement of Young's modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring…
Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic InO
Megan Stokey, Rafal Korlacki, Sean Knight +8
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic…
Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…
Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Yixiong Zheng, Zixuan Feng, A F M Anhar Uddin Bhuiyan +5
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b…
Experimental determination of the valence band offsets of and with
Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6
A predicted type-II staggered band alignment with an approximately valence band offset at the heterointerface has inspired novel band-engineered $III-N/ZnGeN…
Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography
Jith Sarker, A F M Anhar Uddin Bhuiyan, Zixuan Feng +2
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe…
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7
The performance of ultra-wide band gap materials like -GaO is critically dependent on achieving high average electric fields within the active region o…
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…
Donors and Deep Acceptors in -Ga2O3
Adam T. Neal, Shin Mou, Subrina Rafique +9
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in -Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples gr…
Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion
Xu-Qian Zheng, Jaesung Lee, Subrina Rafique +4
Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors fo…
β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection
Xu-Qian Zheng, Jaesung Lee, Subrina Rafique +5
We report on the first beta gallium oxide (β-Ga2O3) crystal feedback oscillator built by employing a vibrating β-Ga2O3 nanoresonator as the frequency reference for real-time middle…