2 papers
physics.app-ph2026
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit +4
We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on se…
cond-mat.mtrl-sci2025
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films
Chenxi Hu, Abdul Mukit, Vijay Gopal Thirupakuzi Vangipuram +4
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal st…