2 papers
cond-mat.mtrl-sci2023
Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…
physics.app-ph2023
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…