10 papers
Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films
Dong Su Yu, Shashu Tomar, Zixiu Huang +7
LiGa5O8 is an ultrawide-bandgap oxide semiconductor that has recently been experimentally demonstrated to exhibit p-type conductivity; however, the origin of the observed p-type tr…
Enhancement-Mode Vertical -GaO U-Trench MOSFET with MOCVD Regrown n Contact Layers and Nitrogen-Implanted Current Blocking Layer
Walid Amir, Jiawei Liu, Surajit Chakraborty +4
In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n layers is demonstrated for enhancement-mode vertical -GaO U…
Coordination-Sensitive Nanoscale Analysis of Defect-Driven Phase Transformation in Si-Doped (AlXGa1-X)2O3
Shaon Das, Jith Sarker, Christopher Chae +5
Defect-driven phase instability critically influences the structural reliability of ultrawide bandgap oxides, yet direct nanoscale metrics linking local chemistry to structural tra…
Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…
Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…
Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates
A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…
In-situ MOCVD Growth and Band Offsets of AlO Dielectric on -GaO and -(AlGa)O thin films
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2
The in-situ metalorganic chemical vapor deposition (MOCVD) growth of AlO dielectrics on -GaO and -(AlGa)O films is investigated as a funct…
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …