5 papers
Enhancement-Mode Vertical -GaO U-Trench MOSFET with MOCVD Regrown n Contact Layers and Nitrogen-Implanted Current Blocking Layer
Walid Amir, Jiawei Liu, Surajit Chakraborty +4
In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n layers is demonstrated for enhancement-mode vertical -GaO U…
Coordination-Sensitive Nanoscale Analysis of Defect-Driven Phase Transformation in Si-Doped (AlXGa1-X)2O3
Shaon Das, Jith Sarker, Christopher Chae +5
Defect-driven phase instability critically influences the structural reliability of ultrawide bandgap oxides, yet direct nanoscale metrics linking local chemistry to structural tra…
Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…
Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…