Enhancement-Mode Vertical $\beta$-Ga${}_2$O${}_3$ U-Trench MOSFET with MOCVD Regrown n${}^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Abstract

In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n${}^{+}$ layers is demonstrated for enhancement-mode vertical $\beta$-Ga${}_2$O${}_3$ U-trench MOSFETs. The regrown n${}^{+}$ contact structure eliminates the need for implantation-based ohmic contact formation while maintaining excellent electrical characteristics. A multi-energy nitrogen-ion-implanted current blocking layer (CBL) followed by 1100~${}^{\circ }$C activation annealing in N${}_2$ ambient for 30 min was employed to achieve normally-OFF operation. Transmission line model measurements yielded a low specific contact resistivity of $2.65\times 10^{-7}\Omega \cdot$cm${}^2$. The fabricated devices exhibited a threshold voltage of approximately 5~V, an ON/OFF current ratio of $1.15\times 10^6$, a peak current density of 158A/cm${}^2$, and a specific ON-resistance of 120.9~m$\Omega \cdot$cm${}^2$. Three-terminal OFF-state breakdown voltages ranging from 920 to 980~V were achieved at $V_{GS}=0$~V. Multi-finger MOSFETs show current scaling to 0.25 A. These results demonstrate that selectively MOCVD-regrown n${}^{+}$ contact layers provide a promising implantation-free approach for realizing high-performance vertical $\beta$-Ga${}_2$O${}_3$ power MOSFETs.