Enhancement-Mode Vertical $\beta$-Ga${}_2$O${}_3$ U-Trench MOSFET with MOCVD Regrown n${}^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Walid Amir, Jiawei Liu, Surajit Chakraborty +4

In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n${}^{+}$ layers is demonstrated for enhancement-mode vertical $\beta$-Ga${}_2$O${}_3$ U…