288 citations · 432 across the 12 of their papers we have counts for
6 papers · 1 filter
Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…
Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography
Jith Sarker, A F M Anhar Uddin Bhuiyan, Zixuan Feng +2
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe…
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7
The performance of ultra-wide band gap materials like -GaO is critically dependent on achieving high average electric fields within the active region o…
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…
Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion
Xu-Qian Zheng, Jaesung Lee, Subrina Rafique +4
Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors fo…
β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection
Xu-Qian Zheng, Jaesung Lee, Subrina Rafique +5
We report on the first beta gallium oxide (β-Ga2O3) crystal feedback oscillator built by employing a vibrating β-Ga2O3 nanoresonator as the frequency reference for real-time middle…