288 citations · 455 across the 7 of their papers we have counts for
7 papers
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…
Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer
Michael J. Motala, Eric Blanton, Al Hilton +8
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufac…
Donors and Deep Acceptors in -Ga2O3
Adam T. Neal, Shin Mou, Subrina Rafique +9
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in -Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples gr…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Adam T. Neal, Shin Mou, Roberto Lopez +4
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy st…