117 citations · 132 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2017★ 117 cited
Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Adam T. Neal, Shin Mou, Roberto Lopez +4
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy st…
cond-mat.mes-hall2017★ 15 cited
Scaling and High-Frequency Performance of AlN/GaN HEMTs
Xi Luo, Subrata Halder, Walter R. Curtice +4
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off freq…