288 citations · 455 across the 7 of their papers we have counts for
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physics.app-ph2023
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
physics.app-ph2020★ 35 cited
Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer
Michael J. Motala, Eric Blanton, Al Hilton +8
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufac…