117 citations · 132 across the 4 of their papers we have counts for
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Donors and Deep Acceptors in -Ga2O3
Adam T. Neal, Shin Mou, Subrina Rafique +9
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in -Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples gr…
Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Adam T. Neal, Shin Mou, Roberto Lopez +4
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy st…
Scaling and High-Frequency Performance of AlN/GaN HEMTs
Xi Luo, Subrata Halder, Walter R. Curtice +4
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off freq…