Dielectric tensor of monoclinic GaO single crystals in the spectral range eV
arXiv:1507.05401 · doi:10.1063/1.4934705
Abstract
The dielectric tensor of -GaO was determined by generalized spectroscopic ellipsometry in a wide spectral range from to as well as by calculation including quasiparticle bands and excitonic effects. The dielectric tensors obtained by both methods are in excellent agreement with each other and the observed transitions in the dielectric function are assigned to the corresponding valence bands. It is shown that the off-diagonal element of the dielectric tensor reaches values up to and cannot be neglected. Even in the transparent spectral range where it is quite small () it causes a rotation of the dielectric axes around the symmetry axis of up to .
Cited by in corpus (18)
- Donors and Deep Acceptors in -Ga2O3
- Raman tensor elements of
- Band-to-band transitions, selection rules, effective mass and exciton binding energy parameters in monoclinic β-Ga2O3
- First-Principles Calculations of the Near-Edge Optical Properties of \b{eta}-Ga2O3
- Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic GaO
- Electron effective mass in Sn-doped monoclinic single crystal -gallium oxide determined by mid-infrared optical Hall effect
- Atomic signatures of local environment from core-level spectroscopy in -GaO
- Highly asymmetric optical properties of \b{eta}-Ga2O3 as probed by linear and nonlinear optical excitation spectroscopy
- Anisotropy and phonon modes from analysis of the dielectric function tensor and inverse dielectric function tensor of monoclinic yttrium orthosilicate
- The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in -GaO
- Spectral measurement of the breakdown limit of and tunnel ionization of self-trapped excitons and holes
- Elevated temperature dependence of the anisotropic visible-to-ultraviolet dielectric function of monoclinic beta-Ga2O3
- The electrical conductivity tensor of -Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
- Quantitative Modeling of Point Defects in -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics
- Infrared active phonons in monoclinic lutetium oxyorthosilicate
- The anisotropic Beer-Lambert law in -GaO: Spectral and polarization dependent absorption and photoresponsivity
- Anisotropic excitonic photocurrent in -GaO
- Origin of the Anisotropic Beer-Lambert Law from Dichroism and Birefringence in -GaO