Electron effective mass in Sn-doped monoclinic single crystal $β$-gallium oxide determined by mid-infrared optical Hall effect

Sean Knight; Alyssa Mock; Rafał Korlacki; Vanya Darakchieva; Bo Monemar; Yoshinao Kumagai; Ken Goto; Masataka Higashiwaki; Mathias Schubert

doi:10.1063/1.5011192

paper

Electron effective mass in Sn-doped monoclinic single crystal $β$ -gallium oxide determined by mid-infrared optical Hall effect

arXiv:1710.10094 · doi:10.1063/1.5011192

Abstract

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal $β$ -Ga $_{2}$ O $_{3}$ is experimentally determined by mid-infrared optical Hall effect to be $(0.284 \pm 0.013) m_{0}$ combining investigations on ( $010$ ) and ( $2 ˉ 01$ ) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped $β$ -Ga $_{2}$ O $_{3}$ . The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdue-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of $0.267 m_{0}$ (arXiv:1704.06711 [cond-mat.mtrl-sci]). Within our uncertainty limits we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results.

Electron effective mass in Sn-doped monoclinic single crystal $β$ -gallium oxide determined by mid-infrared optical Hall effect

Abstract

References in corpus (7)

Cited by in corpus (3)

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Abstract

References in corpus (7)

Cited by in corpus (3)

Electron effective mass in Sn-doped monoclinic single crystal $β$ -gallium oxide determined by mid-infrared optical Hall effect