Electron effective mass in Al$_{0.72}$Ga$_{0.28}$N alloys determined by mid-infrared optical Hall effect

S. Schöche; P. Kühne; T. Hofmann; M. Schubert; D. Nilsson; A. Kakanakova-Georgieva; E. Janzén; V. Darakchieva

doi:10.1063/1.4833195

paper

Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect

arXiv:1311.3684 · doi:10.1063/1.4833195

Abstract

The effective electron mass parameter in Si-doped Al $_{0.72}$ Ga $_{0.28}$ N is determined to be $m^{*} = (0.336 \pm 0.020) m_{0}$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and $m^{*} = 0.232 m_{0}$ for GaN, an average effective electron mass of $m^{*} = 0.376 m_{0}$ can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E $_{1}$ (TO) and one phonon mode behavior of the A $_{1}$ (LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

References in corpus (1)

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

Electron effective mass in Al0.72​Ga0.28​N alloys determined by mid-infrared optical Hall effect

Abstract

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Electron effective mass in Al $_{0.72}$ Ga $_{0.28}$ N alloys determined by mid-infrared optical Hall effect