36 citations · 42 across the 4 of their papers we have counts for
4 papers
Discovering atomistic pathways for supply of metal atoms to graphene surface from methyl-based precursors
D. G. Sangiovanni, R. Faccio, G. K. Gueorguiev +1
Conceptual 2D group III nitrides and oxides (e.g., 2D InN and 2D InO) in heterostructures with graphene have been realized by metalorganic chemical vapor deposition (MOCVD). MOCVD…
2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface
Gianfranco Sfuncia, Giuseppe Nicotra, Filippo Giannazzo +3
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a…
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
Anelia Kakanakova-Georgieva, Alexis Papamichail, Vallery Stanishev +1
Metalorganic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] cm has been performed. In a s…
Electron effective mass in AlGaN alloys determined by mid-infrared optical Hall effect
S. Schöche, P. Kühne, T. Hofmann +5
The effective electron mass parameter in Si-doped AlGaN is determined to be from mid-infrared optical Hall effect measurements. No s…