Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Anelia Kakanakova-Georgieva, Alexis Papamichail, Vallery Stanishev +1

Metalorganic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] $\sim 2\times 10^{19}$ cm${}^{-3}$ has been performed. In a s…