288 citations · 405 across the 4 of their papers we have counts for
4 papers
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
Donors and Deep Acceptors in -Ga2O3
Adam T. Neal, Shin Mou, Subrina Rafique +9
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in -Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples gr…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Adam T. Neal, Shin Mou, Roberto Lopez +4
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy st…