Observation of A Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
arXiv:1711.08294 · doi:10.1039/C7NR05588A
Abstract
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra 4cm above the A mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.
15 pages, 4 figures just accepted for publication in Nanoscale http://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C7NR05588A#!divAbstract
References in corpus (17)
- The Raman Fingerprint of Graphene
- Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
- Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
- The Renaissance of Black Phosphorus
- Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
- Environmental instability of few-layer black phosphorus
- Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
- Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
- Oxygen defects in phosphorene
- High quality sandwiched black phosphorus heterostructure and its quantum oscillations
- Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
- The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
- Infrared fingerprints of few-layer black phosphorus
- Phosphorene oxides: bandgap engineering of phosphorene by oxidation
- Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus
- Splitting of the monolayer out-of-plane A'1 Raman mode in few-layer WS2
- Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs