Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device

Abstract

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last decades in devices with lateral semiconducting (SC) transport channels between ferromagnetic (FM) source (S) and drain (D) contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both, a large two terminal magnetoresistance in lateral 2DES-based spin valve geometry, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The large magnetoresistance is due to finite electric field effects at the FM/SC interface, which boost spin-to-charge conversion. The gating scheme we use is based on switching between uni- and bi-directional spin diffusion, without resorting to the spin-orbit coupling.

arXiv commentMain text: 18 pages, 4 figures; supplementary material: 14 pages, 9 figures

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Cited by in corpus (6)

• Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• Excitonic condensation and metal-semiconductor transition in AA bilayer graphene in the external magnetic field
• On the origin of the giant spin detection efficiency in tunnel barrier based electrical spin detector