High Current Density 2D/3D Esaki Tunnel Diodes

Abstract

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

References in corpus (7)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
• Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity
• High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector
• Layer-Transferred MoS2/GaN PN Diodes
• Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

Cited by in corpus (3)

• Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
• Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
• Atomic resolution interface structure and vertical current injection in highly uniform $Mo{S}_2$ heterojunctions with bulk GaN