Schottky barrier and contact resistance of InSb nanowire field effect transistors

Abstract

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height ${\Phi }_{\mathrm{SB}}\sim 20\mathrm{meV}$ is present at the metal-InSb NW interfaces and its effective height is gate tunable. The contact resistance ($R_{\mathrm{c}}$) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that $R_{\mathrm{c}}$ at on-state exhibits a pronounced magnetic field dependent feature, namely it is increased strongly with increasing magnetic field after an onset field $B_{\mathrm{c}}$. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide a solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW based nanoelectronic devices and quantum devices.

arXiv comment12 pages, 4 figures

References in corpus (12)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
• Carbon Nanotubes as Schottky Barrier Transistors
• Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
• Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires
• Fast spin-orbit qubit in an indium antimonide nanowire
• Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires
• Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device
• Magnetotransport properties of individual InAs nanowires
• Landau levels, edge states and magneto-conductance in GaAs/AlGaAs core-shell nanowires
• Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
• Magneto-transport Subbands Spectroscopy in InAs Nanowires

Cited by in corpus (8)

• Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
• Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields
• Ambipolar Transport in Narrow Bandgap Semiconductor InSb Nanowires
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate