Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Abstract

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
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Cited by in corpus (5)

• Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
• Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
• What Can We Learn from Noise? -- Mesoscopic Nonequilibrium Statistical Physics --
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
• High-field 1/f noise in hBN-encapsulated graphene transistors