Spatial control of laser-induced doping profiles in graphene on hexagonal boron nitride
arXiv:1511.00500 · doi:10.1021/acsami.6b01727
Abstract
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor photo resists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is only limited by the laser spot size (~600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- Boron nitride substrates for high-quality graphene electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Andreev reflection and Klein tunneling in graphene
- Quantum interference and Klein tunneling in graphene heterojunctions
- Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
- Coupling of excitons and defect states in boron-nitride nanostructures
- Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
- Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions
- Conductance oscillations induced by ballistic snake states in a graphene heterojunction
- MoS2: a Choice Substrate for Accessing and Tuning the Electronic Properties of Graphene
- Low B Field Magneto-Phonon Resonances in Single-Layer and Bilayer Graphene
- Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
Cited by in corpus (10)
- Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy
- Line Shape of the Raman 2D Peak of Graphene in Van Der Waals Heterostructures
- Quantum transport through MoS constrictions defined by photodoping
- Charge carrier density-dependent Raman spectra of graphene encapsulated in hexagonal boron nitride
- Semiconductor channel mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors
- Non-volatile rewritable frequency tuning of a nanoelectromechanical resonator using photoinduced doping
- Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
- Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures
- Valley lifetimes of conduction band electrons in monolayer WSe
- How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials