Going Ballistic: Graphene Hot Electron Transistors
arXiv:1509.01025 · doi:10.1016/j.ssc.2015.08.012
Abstract
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Ultrahigh electron mobility in suspended graphene
- Two-Dimensional Material Nanophotonics
- A Graphene Field-Effect Device
- Mobility and Saturation Velocity in Graphene on SiO2
- Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
- Ideal Graphene/Silicon Schottky Junction Diodes
- Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
- Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors
- Graphene Grown on Ge(001) from Atomic Source
- Nucleation and growth of HfO layers on graphene by CVD
- Deposition of thin silicon layers on transferred large area CVD graphene
Cited by in corpus (7)
- Mixed-Dimensional van der Waals Heterostructures
- Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
- Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors
- Dependable contact related parameter extraction in graphene-metal junctions
- Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
- Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
- Ultrahigh Doping of Graphene Using Flame-Deposited MoO3