Band bending inversion in Bi${}_2$Se${}_3$ nanostructures

Abstract

Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi${}_2$Se${}_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times 10^{19}{\text{cm}}^{-3}$ to $6\times 10^{17}{\text{cm}}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.

6 pages, 4 figures

References in corpus (11)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Topological origin of subgap conductance in insulating bilayer graphene
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
• Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
• Direct observation of band bending in topological insulator Bi2Se3
• Pseudo-ballistic transport in 3D topological insulator quantum wires
• Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study

Cited by in corpus (9)

• In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$
• Pseudo-ballistic transport in 3D topological insulator quantum wires
• Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States
• Enhanced transport length of spin-helical Dirac fermions in disordered 3D topological insulators
• Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density
• Conductance fluctuations and disorder induced $\nu =0$ quantum Hall plateau in topological insulator nanowires
• Aperiodic quantum oscillations of particle-hole asymmetric Dirac cones
• Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi${}_2$Se${}_3$/Mn-Bi${}_2$Se${}_3$) heterostructures
• Topologically protected states in $\delta$-doped junctions with band inversion