Electronic transport across linear defects in graphene

Abstract

We investigate the low-energy electronic transport across grain boundaries in graphene ribbons and infinite flakes. Using the recursive Green's function method, we calculate the electronic transmission across different types of grain boundaries in graphene ribbons. We show results for the charge density distribution and the current flow along the ribbon. We study linear defects at various angles with the ribbon direction, as well as overlaps of two monolayer ribbon domains forming a bilayer region. For a class of extended defect lines with periodicity 3, an analytic approach is developed to study transport in infinite flakes. This class of extended grain boundaries is particularly interesting, since the $K$ and $K^{\prime }$ Dirac points are superposed.

15 pages, 13 figures

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• Electron transport properties of graphene nanoribbons with Gaussian deformation
• Intervalley scattering of graphene massless Dirac fermions at 3-periodic grain boundaries
• Transmission across a bilayer graphene region
• Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
• Valley to charge current conversion in graphene grain boundaries
• First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries
• Tunnel Valley Current Filter in the Partially Overlapped Graphene under the Vertical Electric Field
• Energy symmetry and interlayer wave function ratio of tunneling electrons in partially overlapped graphene
• Scattering of a Dirac particle by a Berry phase domain wall