Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

Abstract

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8x10^14 cm^(-2) has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T^2 component - that can be associated with electron-electron scattering - and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy.

13 pages, 6 color figures

References in corpus (17)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Two Dimensional Atomic Crystals
• Control of graphene's properties by reversible hydrogenation
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Colloquium: The transport properties of graphene: An introduction
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
• Electric transport and magnetic properties in multilayer graphene
• Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene
• Two-gap superconductivity in heavily n-doped graphene: ab initio Migdal-Eliashberg theory
• Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate
• Enhancement of electron-hole superfluidity in double few-layer graphene
• Imaging Stacking Order in Few-Layer Graphene

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