Electrons and holes in phosphorene
arXiv:1408.0770 · doi:10.1103/PhysRevB.90.115439
Abstract
We present a symmetry analysis of electronic bandstructure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ('phosphorene'). Expressions for energy dispersion relation and spin-dependent eigenstates for electrons and holes are found via simplification of a perturbative expansion in wavevector away from the zone center using elementary group theory. Importantly, we expose the underlying symmetries giving rise to substantial anisotropy in optical absorption, charge and spin transport properties, and reveal the mechanism responsible for valence band distortion and possible lack of a true direct gap.
References in corpus (9)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
- Tunable optical properties of multilayers black phosphorus thin films
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Tunneling Spin Injection into Single Layer Graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons
- Coherent spin transport through a 350-micron-thick Silicon wafer
Cited by in corpus (20)
- The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
- Modulation of electronic and mechanical properties of phosphorene through strain
- Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes
- Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
- The Optical Properties and Plasmonics of Anisotropic 2-Dimensional Materials
- Anisotropic exciton Stark shift in black phosphorus
- An Analytic Study of Strain Engineering the Electronic Bandgap in Single-Layer Black Phosphorus
- Thermoelectric transport in monolayer phosphorene
- Transition Metal and Vacancy Defect Complexes in Phosphorene: A Spintronic Perspective
- Multilayers black phosphorus: from tight-binding to continuum description
- Spin-orbit coupling and spin relaxation in phosphorene: Intrinsic versus extrinsic effects
- Collective modes in anisotropic double layer systems
- Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model
- Crystallographic Characterization of Black Phosphorene and Its Application in Nanostructures
- Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4
- Electronic structures of air-exposed few-layer black phosphorus by optical spectroscopy
- Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'
- Edge and sublayer degrees of freedom for phosphorene nanoribbons with twofold-degenerate edge bands via electric field
- Anisotropy of the Optical Properties of Pentacene:Black Phosphorus Interfaces
- Exchange effect and magneto-plasmon mode dispersion in an anisotropic two-dimensional electronic system