187 citations · 292 across the 4 of their papers we have counts for
4 papers
Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'
Ian Appelbaum, Pengke Li
Bandedge states in the indirect-gap group-IV metal monochalcogenide monolayers ('four-six-enes' such as SnS, GeTe, etc.) inherit the properties of nearby reciprocal space points of…
Electrons and holes in phosphorene
Pengke Li, Ian Appelbaum
We present a symmetry analysis of electronic bandstructure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ('phosphorene'). Expressi…
Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
Ian Appelbaum, Holly N. Tinkey, Pengke Li
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-depende…
Intrinsic Spin Lifetime of Conduction Electrons in Germanium
Pengke Li, Yang Song, Hanan Dery
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements…