Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

Abstract

We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarization-resolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5 percent. Spin diffusion is studied by varying the distance between pump and probe beams in micro-spectroscopy experiments. We observe diffusion lengths above 100 $\mu$m and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance.

arXiv comment10 pages, 6 figures

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• Weak localization in low-symmetry quantum wells
• Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well
• Spin currents of exciton polaritons in a microcavity with (110)-oriented quantum well
• Fast optical control of spin in semiconductor interfacial structures
• Impurity states of electrons on the surface of a nanotube in a magnetic field