Memory cell based on a $\phi$ Josephson junction

Abstract

The $\phi$ Josephson junction has a doubly degenerate ground state with the Josephson phases $\pm \phi$. We demonstrate the use of such a $\phi$ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the "store" state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with Rapid Single Flux Quantum logic is possible.

to be published in APL

References in corpus (7)

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• High quality ferromagnetic 0 and pi Josephson tunnel junctions
• Theoretical Model of Superconducting Spintronic SIsFS Devices
• Low-T_c Josephson junctions with tailored barrier
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