Protected 0-pi states in SIsFS junctions for Josephson memory and logic

S. V. Bakurskiy; N. V. Klenov; I. I. Soloviev; N. G. Pugach; M. Yu. Kupriyanov; A. A. Golubov

doi:10.1063/1.5045490

paper

Protected 0-pi states in SIsFS junctions for Josephson memory and logic

arXiv:1808.07090 · doi:10.1063/1.5045490

Abstract

We study the peculiarities in current-phase relations (CPR) of the SIsFS junction in the region of $0$ to $π$ transition. These CPR consist of two independent branches corresponding to $0 -$ and $π -$ states of the contact. We have found that depending on the transparency of the SIs tunnel barrier the decrease of the s-layer thickness leads to transformation of the CPR shape going in the two possible ways: either one of the branches exists only in discrete intervals of the phase difference $φ$ or both branches are sinusoidal but differ in the magnitude of their critical currents. We demonstrate that the difference can be as large as $10%$ under maintaining superconductivity in the s layer. An applicability of these phenomena for memory and logic application is discussed.

5 pages, 5 figures