The effect of normal metal layers in ferromagnetic Josephson junctions

Abstract

Using the Usadel equation approach, we provide a compact formalism to calculate the critical current density of 21 different types of ferromagnetic (F) Josephson junctions containing insulating (I) and normal metal (N) layers in the weak link regions. In particular, we obtain that even a thin additional N layer may shift the 0-$\pi$ transitions to larger or smaller values of the thickness $d_F$ of the ferromagnet, depending on its conducting properties. For certain values of $d_F$, a 0-$\pi$ transition can even be achieved by changing only the N layer thickness. We use our model to fit experimental data of SIFS and SINFS tunnel junctions, where S is a superconducting electrode.

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Cited by in corpus (11)

• Superconducting Memristors
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• Ferromagnetic Materials for Josephson π Junctions
• Protected 0-pi states in SIsFS junctions for Josephson memory and logic
• Critical Current Oscillations of Elliptical Josephson Junctions with Single-Domain Ferromagnetic Layers
• Critical Current Oscillations of Josephson Junctions Containing PdFe Nanomagnets
• Spin-Singlet and Spin-Triplet Josephson Junctions for Cryogenic Memory
• Ferromagnetic Josephson junctions for cryogenic memory
• Effect of interfaces on supercurrent through ferromagnetic materials
• Demonstration of 0-pi transition in Josephson junctions containing unbalanced synthetic antiferromagnets
• Enhancement of supercurrent through ferromagnetic materials by interface engineering