Demonstration of 0-pi transition in Josephson junctions containing unbalanced synthetic antiferromagnets
arXiv:2405.20922 · doi:10.1063/5.0215364
Abstract
Josephson junctions containing ferromagnetic (F) materials have been the subject of intense study over the past two decades. The ground state of such junctions oscillates between 0 and pi as the thickness of the ferromagnetic layer increases. For some applications, it might be beneficial to replace a very thin F layer with an unbalanced synthetic antiferromagnet (SAF) consisting of two F layers of different thicknesses whose magnetizations are coupled antiparallel to each other. According to theory, such a system should behave similarly to a single F layer whose thickness is equal to the difference of the two F-layer thicknesses in the SAF. We test that theoretical prediction with Josephson junctions containing unbalanced Ni/Ru/Ni SAFs, keeping the thickness of one layer fixed at 2.0 nm and varying the thickness of the other layer between 2.0 and 5.0 nm. We observe the first 0-pi transition at a thickness difference of 0.86 nm, which closely matches the position of the transition observed previously using single Ni layers.
6 pages, 3 figures. To be published in Applied Physics Letters
References in corpus (10)
- Critical Current Oscillations in Strong Ferromagnetic Pi-Junctions
- Beyond Moore's technologies: operation principles of a superconductor alternative
- Josephson tunnel junctions with strong ferromagnetic interlayer
- Josephson coupling through ferromagnetic heterojunctions with noncollinear magnetizations
- Josephson current in diffusive multilayer superconductor/ferromagnet/superconductor junctions
- Josephson current in a superconductor-ferromagnet junction with two non-collinear magnetic domains
- Ferromagnetic Materials for Josephson π Junctions
- Planarized Fabrication Process With Two Layers of SIS Josephson Junctions and Integration of SIS and SFS π-Junctions
- Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory
- Crossover between short and long range proximity effects in SFS junctions with Ni-based ferromagnets