Numerical modelling of a vortex-based superconducting memory cell: dynamics and geometrical optimization of a fluxonic quantum dot
arXiv:2408.14912 · doi:10.3390/nano14201634
Abstract
The lack of dense random-access memory is one of the main obstacles to the development of digital superconducting computers. It has been suggested that AVRAM cells, based on the storage of a single Abrikosov vortex, the smallest quantized object in superconductors, can enable drastic miniaturization to the nanometer scale. In this work, we present numerical modeling of such cells using time-dependent Ginzburg-Landau equations. The cell represents a fluxonic quantum dot containing a small superconducting island, an asymmetric notch for vortex entrance, a guiding track, and a vortex trap. We determine the optimal geometrical parameters for operation at zero magnetic field and the conditions for controllable vortex manipulation by short current pulses. We report ultra-fast vortex motion with velocities more than an order of magnitude faster than those expected for macroscopic superconductors. This phenomenon is attributed to strong interactions with the edges of a mesoscopic island, combined with the nonlinear reduction of flux-flow viscosity due to nonequilibrium effects in the track. Our results show that such cells can be scaled down to sizes comparable to the London penetration depth, 100 nm, and can enable ultrafast switching on the picosecond scale with ultra-low energy per operation, 0.1 aJ.
arXiv comment12 pages, 7 figures
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