Anomalous phase shift and superconducting diode effect in Josephson junctions via thin films of rare-earth intermetallic magnets

Abstract

The superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions (JJs) with an anomalous ground state phase shift $\ddot{I}{†}_0\ne 0,\ddot{I}€$ ($\ddot{I}{†}_0$-S/F/S JJs) enable the implementation of the zero-field Josephson diode effect with the possibility to control the diode efficiency and polarity. It is just as important that in this case $\ddot{I}{†}_0$ provides a coupling between the superconducting phase and the magnetization of the interlayer. Such $\ddot{I}{†}_0$-S/F/S JJs can be used for superconducting memory and logic circuit applications. Here we present the results of theoretical calculation of the current-phase relationship (CPR), exhibiting the Josephson diode effect and $\ddot{I}{†}_0\ne 0,\ddot{I}€$, for a JJ through a specific magnetic material. As the interlayer of the JJ we consider an ultra-thin film of intermetallic lanthanide ($Ln$)-based compound $\mathrm{GdI}{\mathrm{r}}_2\mathrm{S}{\mathrm{i}}_2$. Using the density functional theory (DFT) methods, we study the electronic structure and magnetic properties of the film. Then the effective tight-binding Hamiltonian (TBH), demonstrating high quantitative consistency with the electronic properties obtained from DFT calculations, is constructed. The TBH is used to calculate CPR in the framework of the Bogolubov-de Gennes approach. The CPRs demonstrate a pronounced $\ddot{I}{†}_0$ of the order of unity and a pronounced Josephson diode effect with the diode efficiency $\lesssim 0.3$. Moreover, the efficiency can be controlled via rotation of in-plane magnetization in the interlayer. The prospects for utilizing alternative magnetic $Ln$-based materials of the $Ln{T}_2{X}_2$ family ($T$ is a transition metal and $X$ is a $p$-element from groups III-V) for the implementation in $\ddot{I}{†}_0$-S/F/S JJs are also discussed.