Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2

Abstract

Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and transition metal dichalcogenide (TMD) homo- and hetero-bilayers. However, a largely unexplored factor is the interlayer distance, d, which can impact the interlayer coupling strength exponentially. In this letter, we quantitatively determine the coupling strengths as a function of interlayer spacing at various critical points of the Brillouin zone in bilayer MoS2. The exponential dependence of the coupling parameter on the gap distance is demonstrated. Most significantly, we achieved a 280% enhancement of K-valley coupling strength with an 8% reduction of the vdW gap, pointing to a new strategy in designing a novel electronic system in vdW bilayers.

References in corpus (33)

• Atomically thin MoS2: A new direct-gap semiconductor
• Van der Waals heterostructures
• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• Van der Waals Density Functional for General Geometries
• Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
• Van der Waals density functionals applied to solids
• Tuning superconductivity in twisted bilayer graphene
• Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
• Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
• Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
• Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
• Moiré Excitons in Van der Waals Heterostructures
• Cloning of Dirac fermions in graphene superlattices
• Signatures of moiré-trapped valley excitons in MoSe${}_2$/WSe${}_2$ heterobilayers
• Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
• Magic continuum in twisted bilayer WSe2
• Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
• Detecting Topological Currents in Graphene Superlattices
• Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
• Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
• Moiré heterostructures as a condensed matter quantum simulator
• Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
• Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$
• Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures
• Topological mosaic in Moiré superlattices of van der Waals heterobilayers
• One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers
• \textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides
• Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure
• Electron quantum metamaterials in van der Waals heterostructures
• Tunable Berry curvature, valley and spin Hall effect in Bilayer MoS${}_2$
• Fine structure of $\mathrm{K}$-excitons in multilayers of transition metal dichalcogenides

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