activity
20182022
most citedSingle-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer

690 citations · 1.1k across the 6 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2022

Efficient Multiple Exciton Generation in Monolayer MoS2

Ashish Soni, Dushyant Kushavah, Li-Syuan Lu +2

Utilizing the excess energy of photoexcitation that is otherwise lost as thermal effects can improve the efficiency of next-generation light-harvesting devices. Multiple exciton ge…

cond-mat.mtrl-sci20221 cited

Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity

Tilo H. Yang, Hsiang-Chi Hu, Fu-Xiang Rikudo Chen +13

The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices…

cond-mat.mtrl-sci2021690 cited

Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer

Tse-An Chen, Chih-Piao Chuu, Chien-Chih Tseng +9

We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirecti…

cond-mat.mes-hall2020

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Woojoo Lee, Yi Lin, Li-Shuan Lu +6

The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many…

cond-mat.mtrl-sci2020393 cited

Purely in-plane ferroelectricity in monolayer SnS at room temperature

N. Higashitarumizu, H. Kawamoto, C. -J. Lee +7

2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several…

physics.app-ph202040 cited

Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe Tunnel Field-Effect Transistors

Gaurav Pande, Jyun-Yan Siao, Wei-Liang Chen +7

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are…