Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS
arXiv:1305.3361 · doi:10.1016/j.physleta.2014.03.026
Abstract
Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular to the monolayer Molybdenum Disulphide plane in the two valleys together with the intervalley electron-phonon scattering. The intervalley electron-phonon scattering is always in the weak scattering limit, which leads to a rapid decrease of the in-plane spin relaxation time with increasing temperature. A decrease of the in-plane spin relaxation time with the increase of the electron density is also shown.
arXiv comment6 pages, 1 figure
References in corpus (36)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Electronic spin transport and spin precession in single graphene layers at room temperature
- First-principles study of the phonon-limited mobility in n-type single-layer MoS2
- Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
- Low-temperature photocarrier dynamics in monolayer MoS2
- Large and tunable photo-thermoelectric effect in single-layer MoS2
- Spin dynamics in semiconductors
- Electronic properties of the MoS2-WS2 heterojunction
- Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
- Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS
- MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
- Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
- Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
- Effective lattice Hamiltonian for monolayer MoS2 : Tailoring electronic structure with perpendicular electric and magnetic fields
- Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions
- Spin-Orbit mediated spin relaxation in monolayer MoS2
- Spintronics in MoS_2 monolayer quantum wires
- High temperature spin dephasing in n-typed GaAs quantum wells
- Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
- Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
- Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a GaAs/AlGaAs quantum well
- Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system
- Multi-subband effect in spin dephasing in semiconductor quantum wells
- Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
- Two Dimensional Crystal Tunneling Devices for THz Operation
- Dynamics of Bulk vs. Nanoscale WS_2: Local Strain and Charging Effects
- Electron spin relaxation in bilayer graphene
- Electron spin relaxation in rippled graphene with low mobilities
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- Exciton fine structure and spin decoherence in monolayers of transition metal dichalcogenides
- Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers
- Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
- Ultrafast dynamics in monolayer TMDCs: the interplay of dark excitons, phonons and intervalley Coulomb exchange
- Observation of exciton-exciton interaction mediated valley depolarization in monolayer MoSe
- Novel valley depolarization dynamics and valley Hall effect of exciton in mono- and bilayer MoS
- Quenching of Intervalley Exchange Coupling in the Presence of Momentum-Dark States in TMDCs
- Influence of Defects on the Valley Polarization Properties of Monolayer MoS Grown by Chemical Vapor Deposition
- Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers
- Electron spin diffusion in monolayer MoS
- Spin and Valley Noise in Two-Dimensional Dirac Materials
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- A novel superconducting-velocity--tunable quasiparticle state and spin relaxation in GaAs (100) quantum wells in proximity to -wave superconductor
- Impact of optically pumped non-equilibrium steady states on luminescence emission of atomically-thin semiconductor excitons
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- Spin diffusion in p-type bilayer WSe