Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
arXiv:1210.3220 · doi:10.1103/PhysRevB.87.081405
Abstract
We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments.
revised version, incl Supplemental Material, published in Phys Rev B
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- Absence of hyperfine effects in C-graphene spin valve devices
- Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
- Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states