How close can one approach the Dirac point in graphene experimentally?
arXiv:1206.3848 · doi:10.1021/nl301922d
Abstract
The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap.
References in corpus (21)
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Boron nitride substrates for high-quality graphene electronics
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Suspended Graphene: a bridge to the Dirac point
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Carrier transport in 2D graphene layers
- A self-consistent theory for graphene transport
- Temperature dependent transport in suspended graphene
- Colloquium: The transport properties of graphene: An introduction
- Spin-orbit gap of graphene: First-principles calculations
- Quantum-limited shot noise in graphene
- Limits on electron quality in suspended graphene due to flexural phonons
- Is graphene in vacuum an insulator?
- How perfect can graphene be?
- Random resistor network model of minimal conductivity in graphene
- Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
- Quantum behavior of graphene transistors near the scaling limit
- Electron-hole asymmetry in two-terminal graphene devices
- DC conductivity of graphene with disorder
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