Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
arXiv:1011.4201 · doi:10.1021/nl1029978
Abstract
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to um size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch x 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices.
23 pages, 5 figures in the main text, 1 supporting information, 5 figures and 1 table in the supporting information
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- Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
- Controllable growth of 1-7 layers of graphene by chemical vapour deposition
- Flexible and Transparent All-Graphene Circuits for Quaternary Digital Modulations
- Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
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- AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport