Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

Abstract

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene.

References in corpus (11)

• The Raman Fingerprint of Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Raman Spectroscopy of Graphene Edges
• Raman Fingerprint of Charged Impurities in Graphene
• Non-adiabatic Kohn-anomaly in a doped graphene monolayer
• Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
• Edge chirality determination of graphene by Raman spectroscopy
• Raman imaging of doping domains in graphene on SiO2
• Weak Localization and Transport Gap in Graphene Antidot Lattices

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