Quantum resistance metrology in graphene

Abstract

We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu =\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$\Omega$ upto 2 $\mu$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$\mu$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Room-Temperature Quantum Hall Effect in Graphene
• Doping graphene with metal contacts
• Current-induced cleaning of graphene
• Quantum-Hall activation gaps in graphene

Cited by in corpus (9)

• Colloquium: The transport properties of graphene: An introduction
• Character of electronic states in graphene antidot lattices: Flat bands and spatial localization
• Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Precision quantization of Hall resistance in transferred graphene
• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
• Nonlinear Transport of Graphene in the Quantum Hall Regime
• Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices