Raman spectroscopy of epitaxial graphene on a SiC substrate

Abstract

The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot of interest as it may speed up the application of graphene for future electronic devices. The interaction of EG and the SiC substrate is critical to its electronic and physical properties. In this work, Raman spectroscopy was used to study the structure of EG and its interaction with SiC substrate. All the Raman bands of EG blue shift from that of bulk graphite and graphene made by micromechanical cleavage, which was attributed to the compressive strain induced by the substrate. A model containing 13 x 13 honeycomb lattice cells of graphene on carbon nanomesh was constructed to explain the origin of strain. The lattice mismatch between graphene layer and substrate causes the compressive stress of 2.27 GPa on graphene. We also demonstrate that the electronic structures of EG grown on Si and C terminated SiC substrates are quite different. Our experimental results shed light on the interaction between graphene and SiC substrate that are critical to the future applications of EG.

20 pages, 5 figures

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Cited by in corpus (6)

• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Edge chirality determination of graphene by Raman spectroscopy
• Graphene made easy: high quality, large-area samples
• Selective epitaxial growth of graphene on SiC
• Probing charged impurities in suspended graphene using Raman spectroscopy
• Raman spectroscopy and imaging of graphene