76 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Samsung Austin Semiconductor (United States)US3 papers
- Northeastern UniversityUS2 papers
- University of California San DiegoUS2 papers
- AkzoNobel (Netherlands)NL1 paper
- Alexandria UniversityEG1 paper
- Amazon (Germany)DE1 paper
- Ashoka UniversityIN1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Institute of Physics and TechnologyKZ1 paper
- Laboratoire Albert FertFR1 paper
- Microsoft (United States)US1 paper
- Moscow Institute of Physics and TechnologyRU1 paper
16 papers
Post-Training Piecewise Linear Quantization for Deep Neural Networks
Jun Fang, Ali Shafiee, Hamzah Abdel-Aziz +3
Quantization plays an important role in the energy-efficient deployment of deep neural networks on resource-limited devices. Post-training quantization is highly desirable since it…
Semantic Robustness of Models of Source Code
Goutham Ramakrishnan, Jordan Henkel, Zi Wang +3
Deep neural networks are vulnerable to adversarial examples - small input perturbations that result in incorrect predictions. We study this problem for models of source code, where…
TW-SMNet: Deep Multitask Learning of Tele-Wide Stereo Matching
Mostafa El-Khamy, Haoyu Ren, Xianzhi Du +1
In this paper, we introduce the problem of estimating the real world depth of elements in a scene captured by two cameras with different field of views, where the first field of vi…
Symmetry constrained machine learning
Doron L. Bergman
Symmetry, a central concept in understanding the laws of nature, has been used for centuries in physics, mathematics, and chemistry, to help make mathematical models tractable. Yet…
DN-ResNet: Efficient Deep Residual Network for Image Denoising
Haoyu Ren, Mostafa El-Khamy, Jungwon Lee
A deep learning approach to blind denoising of images without complete knowledge of the noise statistics is considered. We propose DN-ResNet, which is a deep convolutional neural n…
Modeling Transient Negative Capacitance in Steep-Slope FeFETs
Borna Obradovic, Titash Rakshit, Ryan Hatcher +2
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be ex…
I/O Workload Management for All-Flash Datacenter Storage Systems Based on Total Cost of Ownership
Zhengyu Yang, Manu Awasthi, Mrinmoy Ghosh +2
Recently, the capital expenditure of flash-based Solid State Driver (SSDs) keeps declining and the storage capacity of SSDs keeps increasing. As a result, all-flash storage systems…
Learning Sparse Low-Precision Neural Networks With Learnable Regularization
Yoojin Choi, Mostafa El-Khamy, Jungwon Lee
We consider learning deep neural networks (DNNs) that consist of low-precision weights and activations for efficient inference of fixed-point operations. In training low-precision…
AutoTiering: Automatic Data Placement Manager in Multi-Tier All-Flash Datacenter
Zhengyu Yang, Morteza Hoseinzadeh, Allen Andrews +6
In the year of 2017, the capital expenditure of Flash-based Solid State Drivers (SSDs) keeps declining and the storage capacity of SSDs keeps increasing. As a result, the "selling…
Rehabilitating the ColorChecker Dataset for Illuminant Estimation
Ghalia Hemrit, Graham D. Finlayson, Arjan Gijsenij +5
In a previous work, it was shown that there is a curious problem with the benchmark ColorChecker dataset for illuminant estimation. To wit, this dataset has at least 3 different se…
On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications
J. A. Kittl, B. Obradovic, D. Reddy +3
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much…
Magnetic Tunnel Junction Performance Under Mechanical Strain
Niklas Roschewsky, Sebastian Schafer, Frances Hellman +1
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point…
Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance
J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan +5
In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As…
Lower limits of line resistance in nanocrystalline Back End of Line Cu interconnects
Ganesh Hegde, R. Chris Bowen, Mark S. Rodder
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use…
General Geometric Fluctuation Modeling for Device Variability Analysis
Bo Fu, Seonghoon Jin, Woosung Choi +2
The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations. Compared with the direct mo…
A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide and indium arsenide
Ryan Hatcher, Chris Bowen
We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gal…