output
20132020
most citedSemantic Robustness of Models of Source Code

76 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2018★ 49 cited

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Borna Obradovic, Titash Rakshit, Ryan Hatcher +2

We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be ex…

cond-mat.mes-hall2018★ 36 cited

On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications

J. A. Kittl, B. Obradovic, D. Reddy +3

The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much…

cond-mat.mes-hall2018★ 7 cited

Magnetic Tunnel Junction Performance Under Mechanical Strain

Niklas Roschewsky, Sebastian Schafer, Frances Hellman +1

In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point…

cond-mat.mes-hall2016★ 45 cited

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan +5

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As…

cond-mat.mes-hall2015★ 10 cited

General Geometric Fluctuation Modeling for Device Variability Analysis

Bo Fu, Seonghoon Jin, Woosung Choi +2

The authors propose a new modeling approach based on the impedance field method (IFM) to analyze the general geometric variations in device simulations. Compared with the direct mo…

cond-mat.mes-hall2013★ 4 cited

A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide and indium arsenide

Ryan Hatcher, Chris Bowen

We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gal…